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4 edition of 1998 Fourth International High Temperature Electronics Conference found in the catalog.

1998 Fourth International High Temperature Electronics Conference

HITEC, Albuquerque, New Mexico, USA, June 14-18, 1998

by International High Temperature Electronics Conference (4th 1998 Albuquerque, N.M.)

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  • 19 Currently reading

Published by The Institute of Electrical and Electronics Engineers, Inc. in New York City, NY .
Written in English

    Subjects:
  • Electronics -- Materials -- Congresses.,
  • Heat resistant materials -- Congresses.,
  • Silicon-on-insulator technology -- Congresses.,
  • Field-effect transistors -- Congresses.,
  • Gallium arsenide -- Congresses.

  • Edition Notes

    Includes bibliographical references and index.

    Statementsponsored by Air Force Research Laboratory ... [et al.] ; technical co-sponsorship from Electron Devices Society and Components Packaging and Manufacturing Technology Society.
    ContributionsAir Force Research Laboratory (Wright-Patterson Air Force Base, Ohio), IEEE Electron Devices Society., Components, Packaging & Manufacturing Technology Society.
    Classifications
    LC ClassificationsTK7871 .I574 1998
    The Physical Object
    Paginationvii, 332 p. :
    Number of Pages332
    ID Numbers
    Open LibraryOL396397M
    ISBN 100780345401, 078034541X
    LC Control Number98084231

    Fourth International High Temperature Electronics Conference: HITEC, Albuquerque, New Mexico, USA, June , by International High Temperature Electronics Conference ().   Aluminum Nitride (AlN) based surface acoustic wave (SAW) pressure sensors for harsh environment applications are of great interest in recent years. Such sensor employs a thick diaphragm (∼50 μm) to endure the high pressure, but this seriously limits the sensitivity of these devices. Understanding of the working mechanism and the effect of geometrical parameters Cited by:

    This letter presents the development of high-performance integrated cryogenic power modules, where both driver components and power metal-oxide semiconductor field-effect transistors are integrated in a single package, to be used in a 50kW prototype cryogenic inverter operating at liquid nitrogen temperature. The authors have demonstrated a compact high-voltage, Cited by: 7. Reliable Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN formed by vacuum annealing Journal of Proceedings of the Fourth International High Temperature Electronics Conference, Albuquerque, NM, (unpublished), p. Cited by:

    COVID Resources. Reliable information about the coronavirus (COVID) is available from the World Health Organization (current situation, international travel).Numerous and frequently-updated resource results are available from this ’s WebJunction has pulled together information and resources to assist library staff as they consider how to handle . Check out International Conference on High Temperature Electronics Hotel Albuquerque at Old Town Dates Location Schedule Registration Agenda Reviews Exhibitor list. A 3 days conference, International Conference on High Temperature Electronics is going to be held in Albuquerque, USA from 28 Apr to 30 Apr focusing on Electronics & Electrical .


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1998 Fourth International High Temperature Electronics Conference by International High Temperature Electronics Conference (4th 1998 Albuquerque, N.M.) Download PDF EPUB FB2

Get this from a library. Fourth International High Temperature Electronics Conference: HITEC, Albuquerque, New Mexico, USA, June[Air Force Research Laboratory (Wright-Patterson Air Force Base, Ohio); IEEE Electron Devices Society.; Components, Packaging & Manufacturing Technology Society.;].

Decision support system for high temperature electronics Fourth International High Temperature Electronics Conference. HITEC (Cat. NoEX) Article #: Date of Conference: June Date Added to IEEE Xplore: 06 August ISBN Information: Print ISBN: INSPEC Cited by: 1.

Hiten The Third European Conference on High Temperature Electronics [European Conference on High Temperature Electronics (3rd: Berlin, Germany)] on *FREE* shipping on qualifying offers.

Hiten The Third European Conference on High Temperature ElectronicsAuthor: Germany) European Conference on High Temperature Electronics (3rd: Berlin. Ceramic dielectric performance under high temperature life test Fourth International High Temperature Electronics Conference.

HITEC (Cat. NoEX) Article #: Date of Conference: June Date Added to IEEE Xplore: 06 August ISBN Information: Print ISBN: INSPEC Cited by: 1. The effects of intermetallic formation and fatigue on wire bond reliability will also be assessed. Published in: Fourth International High Temperature Electronics Conference Cited by: (English) In: High Temperature Electronics Conference, HITEC.

Fourth International,Conference paper (Refereed) Abstract [en] A parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiCN in Inductively Coupled Plasma NF3/O2 and NF 3/Ar discharges has been performed. A large number of devices (more than one hundred) were tested to study the trend of the device behavior at high temperatures.

After constant temperature tests, thermal-cycling was done on the good devices. Published in: Fourth International High Temperature Electronics by: 6.

Title: Publisher: Begin Year: End Year: Source: Habitat International: ELSEVIER: Present: INDEST: Handbooks in Operations Research and Management Science: ELSEVIER. High temperature ohmic contacts to p-type SiC. Conference: High Temperature Electronics Conference, HITEC.

Fourth International. fourth international superconductive electronics conference august 11clarion harvest house boulder, colorado usa * a high temperature superconductor chirp filter based on and room temperature electronics r. schmidt, b. wiesenthal, and h. kratz. International Journal of Innovative Technology and Exploring Engineering (IJITEE) covers topics in the field of Computer Science & Engineering, Information Technology, Electronics & Communication, Electrical and Electronics, Electronics and Telecommunication, Civil Engineering, Mechanical Engineering, Textile Engineering and all interdisciplinary streams of.

Abstract: For measuring the cylinder pressure in combustion engines a high temperature pressure sensor has been developed. The sensor is made of a piezoresistive /spl beta/-SiC-on-SOI (SiCOI) sensor chip and a specially designed housing. The SiCOI sensor was characterized under static pressure up to 20 by:   Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications Journal of Applied Phys ( and S.

Mahney, Proceedings of the Fourth International High Temperature Electronics Conference,Vol. 4, p. Google Scholar; Cited by: The underhood automotive environment is harsh and current trends in the automotive electronics industry will be pushing the temperature envelope for electronic components.

The desire to place engine control units on the engine and transmission control units either on or in the transmission will push the ambient temperature above /spl deg/C.

However, extreme cost pressures. HiTEC continues the tradition of providing the leading biennial conference dedicated to the advancement and dissemination of knowledge of the high temperature electronics industry. Under the organizational sponsorship of the International Microelectronics Assembly and Packaging Society, HiTEC will be the forum for presenting leading.

PROCEEDINGS First International High Temperature Electronics Conference with Short Course Albuquerque Marriott Hotel Albuquerque, New Mexico USA June 16 - 20, HiTEC EDITORS: Donald B. King Sandia National Laboratories Frank V.

Thome Sandia National Laboratories Sponsored by: Wright Laboratory and Sandia National Laboratories UB/TIB File Size: KB. 4th International Conference on Mathematics, Science, and Education, Indonesia; XVI Meeting of Physics, Peru "INTERNATIONAL YOUTH CONFERENCE ON ELECTRONICS, TELECOMMUNICATIONS AND INFORMATION TECHNOLOGIES" (YETI), Russian Federation 7th edition of the International Workshop on Numerical Modelling of High Temperature.

Abstract In this paper, the high-temperature and self-heating effects in the fully depleted enhancement lightly doped SOI n-MOSFETs are investigated over a wide range of temperatures from to °K by using the SILVACO 1 TCAD tools.

In particular, we have studied their current–voltage characteristics (I D – V GS and I D – V DS), threshold voltages and. Abstract Precious metal based thick-film material was used for printed wires, wire bond pads, test lead-attach, and conductive die-attach for high temperature (up to °C and beyond) chip levelpackaging.

A SiC Shottky diode with a thin-film coated backside was attached to a ceramicsubstrate using precious metal based thick-film material as the electrically conductive. Fourth International Conference on Advances in Steel Structures Proceedings of the Fourth International Conference on Advances in Steel Structures 13–15 JuneShanghai, China.

Book that the prescribed plastic and elastic limits for webs in the Australian Steel Structures Standard AS are appropriate for high strength steel. Third International High Temperature Electronics Conference (HiTEC) Albuquerque Marriott Albuquerque, New Mexico USA June Sponsored by: Sandia National Laboratories Wright Laboratory/US Air Force Cree Research, Inc.

Honeywell Solid State Electronics Center Auburn University Epitronics - An ATMI Company Team Specialty Products Northrop. Albuquerque, NM: The Fourth International High Temperature Electronics Conference (HITEC), June 14–18, 9. A high-temperature, high-voltage, fast response linear voltage regulator.

Analog Integr Circ Sig Proc – (). https Cited by: 3.The 4th International Conference on Electronic, Communications and Networks (CECNet) inherits the fruitfulness of the past three conferences and lays a foundation for the forthcoming next year in Shanghai.

CECNet was hosted by Hubei University of Science and Technology, China, with the main.